April 4, 2017
Abstract: GrindEQ Math Utilities 2007:MathType to Equation, Normalizer, Word to LaTeX, LaT is a program that converts Microsoft Word documents into.
GrindEQ Math Utilities 2007:MathType to Equation, Normalizer, Word to LaTeX, LaT
It is known to form a circuit for a static random access memory (SRAM) by connecting an NMOS pull-up transistor and a PMOS pull-down transistor in series with a load of a complementary type. By the NMOS pull-up transistor, when a power source voltage of a high level is applied, a data or output voltage is kept at a high level. By the PMOS pull-down transistor, when a power source voltage of a low level is applied, a data or output voltage is kept at a low level. The NMOS pull-up transistor and the PMOS pull-down transistor are generally formed of an NMOS transistor and a PMOS transistor, respectively, and are formed in different wells or different regions in a semiconductor substrate.
A circuit of the SRAM may include a sense amplifier for amplifying the output voltage. When the sense amplifier is formed of a CMOS (complementary type metal oxide semiconductor) amplifier, the CMOS amplifier is generally formed by arranging a CMOS inverter in a well or in a region separate from the NMOS pull-up transistor and the PMOS pull-down transistor. In this case, there are two inputs and two outputs, and therefore, the CMOS amplifier requires two NMOS transistors and two PMOS transistors. Thus, a circuit area of the CMOS amplifier becomes larger than a circuit area of the NMOS pull-up transistor and the PMOS pull-down transistor.
A circuit of the SRAM may further include a driver circuit for driving the NMOS pull-up transistor and the PMOS pull-down transistor. When the driver circuit is formed of a CMOS amplifier, the CMOS amplifier also requires a PMOS transistor for driving a gate of the PMOS transistor, and an NMOS transistor for driving a gate of the NMOS transistor. Therefore, a circuit area of the driver circuit becomes larger than a circuit area of the NMOS pull-up transistor and the PMOS pull-down transistor.
In order to reduce a size of a circuit of the SRAM, it is possible to form the NMOS pull-up transistor and the PMOS pull- be359ba680
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